N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

RS tootekood: 495-578Bränd: InfineonTootja Part nr.: IRFB4110PBF
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

370 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.82mm

Transistor Material

Si

Typical Gate Charge @ Vgs

150 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.66mm

Minimum Operating Temperature

-55 °C

Height

9.02mm

Toote üksikasjad

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 4,50

tk (ilma käibemaksuta)

€ 5,49

tk (koos käibemaksuga)

N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

€ 4,50

tk (ilma käibemaksuta)

€ 5,49

tk (koos käibemaksuga)

N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhind
1 - 9€ 4,50
10 - 24€ 4,30
25 - 49€ 4,20
50 - 99€ 3,90
100+€ 3,65

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

370 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.82mm

Transistor Material

Si

Typical Gate Charge @ Vgs

150 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.66mm

Minimum Operating Temperature

-55 °C

Height

9.02mm

Toote üksikasjad

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more