onsemi NGTB30N120LWG IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
260 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.26 x 5.3 x 21.08mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Päritoluriik
China
Toote üksikasjad
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 5,20
tk (torus 30) (ilma käibemaksuta)
€ 6,344
tk (torus 30) (koos käibemaksuga)
30
€ 5,20
tk (torus 30) (ilma käibemaksuta)
€ 6,344
tk (torus 30) (koos käibemaksuga)
30
Osta lahtiselt
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 30 - 30 | € 5,20 | € 156,00 |
| 60 - 120 | € 4,95 | € 148,50 |
| 150 - 270 | € 4,75 | € 142,50 |
| 300 - 570 | € 4,30 | € 129,00 |
| 600+ | € 3,80 | € 114,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
260 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.26 x 5.3 x 21.08mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Päritoluriik
China
Toote üksikasjad
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products