onsemi NGTB40N120S3W IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole

RS tootekood: 134-9506Bränd: onsemiTootja Part nr.: NGTB40N120S3WG
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

454 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Common Emitter

Dimensions

16.25 x 5.3 x 21.34mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

4912pF

Maximum Operating Temperature

+175 °C

Toote üksikasjad

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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€ 5,00

tk (torus 30) (ilma käibemaksuta)

€ 6,10

tk (torus 30) (koos käibemaksuga)

onsemi NGTB40N120S3W IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole

€ 5,00

tk (torus 30) (ilma käibemaksuta)

€ 6,10

tk (torus 30) (koos käibemaksuga)

onsemi NGTB40N120S3W IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Tuub
30 - 120€ 5,00€ 150,00
150 - 270€ 4,35€ 130,50
300+€ 4,15€ 124,50

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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

454 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Common Emitter

Dimensions

16.25 x 5.3 x 21.34mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

4912pF

Maximum Operating Temperature

+175 °C

Toote üksikasjad

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.