Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
24.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
9.6 nC @ 10 V
Width
6.22mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
2.38mm
Series
NVD5C684NL
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,828
tk (rullis 2500) (ilma käibemaksuta)
€ 1,01
tk (rullis 2500) (koos käibemaksuga)
2500
€ 0,828
tk (rullis 2500) (ilma käibemaksuta)
€ 1,01
tk (rullis 2500) (koos käibemaksuga)
2500
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
24.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
9.6 nC @ 10 V
Width
6.22mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
2.38mm
Series
NVD5C684NL
Minimum Operating Temperature
-55 °C
Toote üksikasjad