N-Channel MOSFET, 17 A, 60 V, 3-Pin DPAK onsemi NVD5C688NL

RS tootekood: 141-2081Bränd: onsemiTootja Part nr.: NVD5C688NLT4G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

60 V

Series

NVD5C688NL-D

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

18 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

7 nC @ 10 V

Height

2.38mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

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N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,759

tk (rullis 2500) (ilma käibemaksuta)

€ 0,926

tk (rullis 2500) (koos käibemaksuga)

N-Channel MOSFET, 17 A, 60 V, 3-Pin DPAK onsemi NVD5C688NL

€ 0,759

tk (rullis 2500) (ilma käibemaksuta)

€ 0,926

tk (rullis 2500) (koos käibemaksuga)

N-Channel MOSFET, 17 A, 60 V, 3-Pin DPAK onsemi NVD5C688NL
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

60 V

Series

NVD5C688NL-D

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

18 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

7 nC @ 10 V

Height

2.38mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Toote üksikasjad

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more