N-Channel MOSFET, 370 A, 40 V, 4 + Tab-Pin DFN onsemi NVMFS5C404NLAFT1G

RS tootekood: 141-2965Bränd: onsemiTootja Part nr.: NVMFS5C404NLAFT1G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

370 A

Maximum Drain Source Voltage

40 V

Series

NVMFS5C404NL

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

4 + Tab

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Width

6.1mm

Typical Gate Charge @ Vgs

181 nC @ 10 V

Length

5.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Height

1.05mm

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N-Channel Power MOSFET, 40V, ON Semiconductor

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€ 4,00

tk (pakis 2) (ilma käibemaksuta)

€ 4,88

tk (pakis 2) (koos käibemaksuga)

N-Channel MOSFET, 370 A, 40 V, 4 + Tab-Pin DFN onsemi NVMFS5C404NLAFT1G
Valige pakendi tüüp

€ 4,00

tk (pakis 2) (ilma käibemaksuta)

€ 4,88

tk (pakis 2) (koos käibemaksuga)

N-Channel MOSFET, 370 A, 40 V, 4 + Tab-Pin DFN onsemi NVMFS5C404NLAFT1G
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
2 - 8€ 4,00€ 8,00
10 - 18€ 3,55€ 7,10
20 - 48€ 3,20€ 6,40
50 - 98€ 3,00€ 6,00
100+€ 2,95€ 5,90

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

370 A

Maximum Drain Source Voltage

40 V

Series

NVMFS5C404NL

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

4 + Tab

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Width

6.1mm

Typical Gate Charge @ Vgs

181 nC @ 10 V

Length

5.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Height

1.05mm

Toote üksikasjad

N-Channel Power MOSFET, 40V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more