N-Channel MOSFET, 50 A, 30 V, 8-Pin VSON-CLIP Texas Instruments CSD17308Q3T

RS tootekood: 133-0151Bränd: Texas InstrumentsTootja Part nr.: CSD17308Q3T
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

30 V

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

7.4 nC

Width

3.4mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Series

NexFET

Height

1.1mm

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,16

tk (pakis 10) (ilma käibemaksuta)

€ 0,195

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 50 A, 30 V, 8-Pin VSON-CLIP Texas Instruments CSD17308Q3T
Valige pakendi tüüp

€ 0,16

tk (pakis 10) (ilma käibemaksuta)

€ 0,195

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 50 A, 30 V, 8-Pin VSON-CLIP Texas Instruments CSD17308Q3T
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

30 V

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

7.4 nC

Width

3.4mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Series

NexFET

Height

1.1mm

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more