Diodes Inc P-Channel MOSFET, 3.3 A, 20 V, 3-Pin SOT-23 DMG2305UX-13

RS tootekood: 122-3315Bränd: DiodesZetexTootja Part nr.: DMG2305UX-13
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

10.2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Lao andmed ajutiselt ei ole saadaval.

€ 580,00

€ 0,058 tk (rullis 10000) (ilma käibemaksuta)

€ 707,60

€ 0,071 tk (rullis 10000) (koos käibemaksuga)

Diodes Inc P-Channel MOSFET, 3.3 A, 20 V, 3-Pin SOT-23 DMG2305UX-13

€ 580,00

€ 0,058 tk (rullis 10000) (ilma käibemaksuta)

€ 707,60

€ 0,071 tk (rullis 10000) (koos käibemaksuga)

Diodes Inc P-Channel MOSFET, 3.3 A, 20 V, 3-Pin SOT-23 DMG2305UX-13
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

10.2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more