Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Length
3.35mm
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
0.78mm
Series
DMP
Minimum Operating Temperature
-55 °C
Toote üksikasjad
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,37
tk (rullis 3000) (ilma käibemaksuta)
€ 0,451
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,37
tk (rullis 3000) (ilma käibemaksuta)
€ 0,451
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Length
3.35mm
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
0.78mm
Series
DMP
Minimum Operating Temperature
-55 °C
Toote üksikasjad