Diodes Inc MMBT6427-7-F NPN Darlington Pair, 500 mA 40 V HFE:20000, 3-Pin SOT-23

RS tootekood: 165-8529Bränd: DiodesZetexTootja Part nr.: MMBT6427-7-F
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Tehnilised dokumendid

Spetsifikatsioonid:

Transistor Type

NPN

Maximum Continuous Collector Current

500 mA

Maximum Collector Emitter Voltage

40 V

Maximum Emitter Base Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

20000

Maximum Base Emitter Saturation Voltage

2 V

Maximum Collector Base Voltage

40 V

Maximum Collector Emitter Saturation Voltage

1.5 V

Maximum Collector Cut-off Current

1µA

Height

1mm

Width

1.4mm

Maximum Operating Temperature

+150 °C

Length

3mm

Maximum Power Dissipation

300 mW

Minimum Operating Temperature

-55 °C

Dimensions

3 x 1.4 x 1mm

Päritoluriik

China

Toote üksikasjad

Darlington Transistors, Diodes Inc

Transistors, Diodes Inc

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,037

tk (rullis 3000) (ilma käibemaksuta)

€ 0,045

tk (rullis 3000) (koos käibemaksuga)

Diodes Inc MMBT6427-7-F NPN Darlington Pair, 500 mA 40 V HFE:20000, 3-Pin SOT-23

€ 0,037

tk (rullis 3000) (ilma käibemaksuta)

€ 0,045

tk (rullis 3000) (koos käibemaksuga)

Diodes Inc MMBT6427-7-F NPN Darlington Pair, 500 mA 40 V HFE:20000, 3-Pin SOT-23
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Transistor Type

NPN

Maximum Continuous Collector Current

500 mA

Maximum Collector Emitter Voltage

40 V

Maximum Emitter Base Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

20000

Maximum Base Emitter Saturation Voltage

2 V

Maximum Collector Base Voltage

40 V

Maximum Collector Emitter Saturation Voltage

1.5 V

Maximum Collector Cut-off Current

1µA

Height

1mm

Width

1.4mm

Maximum Operating Temperature

+150 °C

Length

3mm

Maximum Power Dissipation

300 mW

Minimum Operating Temperature

-55 °C

Dimensions

3 x 1.4 x 1mm

Päritoluriik

China

Toote üksikasjad

Darlington Transistors, Diodes Inc

Transistors, Diodes Inc

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more