Infineon BCV47E6327HTSA1 NPN Darlington Transistor, 500 mA 60 V HFE:2000, 3-Pin SOT-23

RS tootekood: 445-2095PBränd: InfineonTootja Part nr.: BCV47E6327HTSA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Transistor Type

NPN

Maximum Continuous Collector Current

500 mA

Maximum Collector Emitter Voltage

60 V

Maximum Emitter Base Voltage

10 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

2000

Maximum Base Emitter Saturation Voltage

1.5 V

Maximum Collector Base Voltage

80 V

Maximum Collector Emitter Saturation Voltage

1 V

Maximum Collector Cut-off Current

0.0001mA

Minimum Operating Temperature

-65 °C

Height

1mm

Dimensions

2.9 x 1.3 x 1mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Width

1.3mm

Toote üksikasjad

Darlington Transistors, Infineon

Bipolar Transistors, Infineon

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,261

tk (rullis) (ilma käibemaksuta)

€ 0,318

tk (rullis) (koos käibemaksuga)

Infineon BCV47E6327HTSA1 NPN Darlington Transistor, 500 mA 60 V HFE:2000, 3-Pin SOT-23
Valige pakendi tüüp

€ 0,261

tk (rullis) (ilma käibemaksuta)

€ 0,318

tk (rullis) (koos käibemaksuga)

Infineon BCV47E6327HTSA1 NPN Darlington Transistor, 500 mA 60 V HFE:2000, 3-Pin SOT-23
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Transistor Type

NPN

Maximum Continuous Collector Current

500 mA

Maximum Collector Emitter Voltage

60 V

Maximum Emitter Base Voltage

10 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

2000

Maximum Base Emitter Saturation Voltage

1.5 V

Maximum Collector Base Voltage

80 V

Maximum Collector Emitter Saturation Voltage

1 V

Maximum Collector Cut-off Current

0.0001mA

Minimum Operating Temperature

-65 °C

Height

1mm

Dimensions

2.9 x 1.3 x 1mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Width

1.3mm

Toote üksikasjad

Darlington Transistors, Infineon

Bipolar Transistors, Infineon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more