Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMaximum Continuous Collector Current
275 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1400 W
Configuration
Series
Package Type
AG-62MM-1
Mounting Type
Panel Mount
Channel Type
N
Transistor Configuration
Series
Dimensions
106.4 x 61.4 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Päritoluriik
Malaysia
Toote üksikasjad
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 157,00
Each (In a Tray of 10) (ilma käibemaksuta)
€ 191,54
Each (In a Tray of 10) (koos käibemaksuga)
10
€ 157,00
Each (In a Tray of 10) (ilma käibemaksuta)
€ 191,54
Each (In a Tray of 10) (koos käibemaksuga)
10
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMaximum Continuous Collector Current
275 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1400 W
Configuration
Series
Package Type
AG-62MM-1
Mounting Type
Panel Mount
Channel Type
N
Transistor Configuration
Series
Dimensions
106.4 x 61.4 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Päritoluriik
Malaysia
Toote üksikasjad
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.