Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
333 W
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Dimensions
16.03 x 21.1 x 5.16mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Päritoluriik
Germany
Toote üksikasjad
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Palun kontrollige hiljem uuesti.
€ 3,50
tk (torus 30) (ilma käibemaksuta)
€ 4,27
tk (torus 30) (koos käibemaksuga)
30
€ 3,50
tk (torus 30) (ilma käibemaksuta)
€ 4,27
tk (torus 30) (koos käibemaksuga)
30
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
333 W
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Dimensions
16.03 x 21.1 x 5.16mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Päritoluriik
Germany
Toote üksikasjad
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.