Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Series
IRF1407PbF
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4.83mm
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 2,80
tk (pakis 5) (ilma käibemaksuta)
€ 3,416
tk (pakis 5) (koos käibemaksuga)
5
€ 2,80
tk (pakis 5) (ilma käibemaksuta)
€ 3,416
tk (pakis 5) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 20 | € 2,80 | € 14,00 |
25 - 45 | € 2,50 | € 12,50 |
50 - 120 | € 2,35 | € 11,75 |
125 - 245 | € 2,15 | € 10,75 |
250+ | € 2,05 | € 10,25 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Series
IRF1407PbF
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4.83mm
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V