Littelfuse MG06400D-BN4MM Series IGBT Module, 460 A 600 V, 7-Pin 62MM Module, Panel Mount
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
LittelfuseMaximum Continuous Collector Current
460 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1400 W
Package Type
62MM Module
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Switching Speed
1MHz
Transistor Configuration
Series
Dimensions
108 x 62 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Päritoluriik
China
Toote üksikasjad
IGBT Modules, Littelfuse
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 120,00
tk (ilma käibemaksuta)
€ 146,40
tk (koos käibemaksuga)
Standard
1
€ 120,00
tk (ilma käibemaksuta)
€ 146,40
tk (koos käibemaksuga)
Standard
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
LittelfuseMaximum Continuous Collector Current
460 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1400 W
Package Type
62MM Module
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Switching Speed
1MHz
Transistor Configuration
Series
Dimensions
108 x 62 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Päritoluriik
China
Toote üksikasjad
IGBT Modules, Littelfuse
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products