Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.3mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Height
15.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Päritoluriik
China
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 2,15
tk (torus 50) (ilma käibemaksuta)
€ 2,623
tk (torus 50) (koos käibemaksuga)
50
€ 2,15
tk (torus 50) (ilma käibemaksuta)
€ 2,623
tk (torus 50) (koos käibemaksuga)
50
Osta lahtiselt
kogus | Ühikuhind | Per Tuub |
---|---|---|
50 - 50 | € 2,15 | € 107,50 |
100 - 200 | € 1,65 | € 82,50 |
250 - 450 | € 1,60 | € 80,00 |
500 - 950 | € 1,40 | € 70,00 |
1000+ | € 1,20 | € 60,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.3mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Height
15.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Päritoluriik
China