Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
100mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
8 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
160pF
Source Gate On-Capacitance
160pF
Dimensions
5.2 x 4.19 x 5.33mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
5.2mm
Height
5.33mm
Width
4.19mm
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Palun kontrollige hiljem uuesti.
€ 0,739
tk (rullis) (ilma käibemaksuta)
€ 0,902
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
20
€ 0,739
tk (rullis) (ilma käibemaksuta)
€ 0,902
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
20
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
20 - 80 | € 0,739 | € 14,78 |
100 - 180 | € 0,508 | € 10,16 |
200 - 980 | € 0,459 | € 9,18 |
1000 - 1980 | € 0,408 | € 8,16 |
2000+ | € 0,345 | € 6,90 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
100mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
8 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
160pF
Source Gate On-Capacitance
160pF
Dimensions
5.2 x 4.19 x 5.33mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
5.2mm
Height
5.33mm
Width
4.19mm
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.