Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
9.65mm
Length
10.67mm
Typical Gate Charge @ Vgs
78 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.83mm
Päritoluriik
China
€ 6 400,00
€ 4,00 tk (rullis 1600) (ilma käibemaksuta)
€ 7 936,00
€ 4,96 tk (rullis 1600) (koos käibemaksuga)
1600
€ 6 400,00
€ 4,00 tk (rullis 1600) (ilma käibemaksuta)
€ 7 936,00
€ 4,96 tk (rullis 1600) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
1600
Lao andmed ajutiselt ei ole saadaval.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
9.65mm
Length
10.67mm
Typical Gate Charge @ Vgs
78 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.83mm
Päritoluriik
China


