Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiMaximum Continuous Collector Current
160 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
454 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Common Emitter
Dimensions
16.25 x 5.3 x 21.34mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
4912pF
Maximum Operating Temperature
+175 °C
Toote üksikasjad
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Palun kontrollige hiljem uuesti.
€ 5,20
tk (torus 30) (ilma käibemaksuta)
€ 6,344
tk (torus 30) (koos käibemaksuga)
30
€ 5,20
tk (torus 30) (ilma käibemaksuta)
€ 6,344
tk (torus 30) (koos käibemaksuga)
30
Osta lahtiselt
kogus | Ühikuhind | Per Tuub |
---|---|---|
30 - 120 | € 5,20 | € 156,00 |
150 - 270 | € 4,45 | € 133,50 |
300+ | € 4,25 | € 127,50 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiMaximum Continuous Collector Current
160 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
454 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Common Emitter
Dimensions
16.25 x 5.3 x 21.34mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
4912pF
Maximum Operating Temperature
+175 °C
Toote üksikasjad
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.