Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Toote üksikasjad
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,413
tk (rullis) (ilma käibemaksuta)
€ 0,504
tk (rullis) (koos käibemaksuga)
25
€ 0,413
tk (rullis) (ilma käibemaksuta)
€ 0,504
tk (rullis) (koos käibemaksuga)
25
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
25 - 50 | € 0,413 | € 10,32 |
75 - 125 | € 0,284 | € 7,10 |
150 - 275 | € 0,178 | € 4,45 |
300 - 575 | € 0,169 | € 4,22 |
600+ | € 0,164 | € 4,10 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Toote üksikasjad