Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
250 mA, 880 mA
Maximum Drain Source Voltage
20 V, 30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω, 500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
270 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, -12 V, +12 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Toote üksikasjad
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.
MOSFET Transistors, ON Semiconductor
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Palun kontrollige hiljem uuesti.
€ 0,363
tk (lindis) (ilma käibemaksuta)
€ 0,443
tk (lindis) (koos käibemaksuga)
25
€ 0,363
tk (lindis) (ilma käibemaksuta)
€ 0,443
tk (lindis) (koos käibemaksuga)
25
Osta lahtiselt
kogus | Ühikuhind | Per Lint |
---|---|---|
25 - 100 | € 0,363 | € 9,08 |
125 - 225 | € 0,345 | € 8,62 |
250 - 600 | € 0,326 | € 8,15 |
625 - 1225 | € 0,31 | € 7,75 |
1250+ | € 0,298 | € 7,45 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
250 mA, 880 mA
Maximum Drain Source Voltage
20 V, 30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω, 500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
270 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, -12 V, +12 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Toote üksikasjad
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.