STMicroelectronics MDmesh N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-220 STP4N150

RS tootekood: 761-0588Bränd: STMicroelectronicsTootja Part nr.: STP4N150
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

1500 V

Package Type

TO-220

Series

MDmesh

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

30 nC @ 10 V

Width

4.6mm

Height

15.75mm

Toote üksikasjad

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Lao andmed ajutiselt ei ole saadaval.

€ 5,30

€ 5,30 tk (ilma käibemaksuta)

€ 6,57

€ 6,57 tk (koos käibemaksuga)

STMicroelectronics MDmesh N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-220 STP4N150
Valige pakendi tüüp

€ 5,30

€ 5,30 tk (ilma käibemaksuta)

€ 6,57

€ 6,57 tk (koos käibemaksuga)

STMicroelectronics MDmesh N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-220 STP4N150
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

1500 V

Package Type

TO-220

Series

MDmesh

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

30 nC @ 10 V

Width

4.6mm

Height

15.75mm

Toote üksikasjad

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more