STMicroelectronics MDmesh DM2 N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STW28N60DM2

RS tootekood: 168-5897Bränd: STMicroelectronicsTootja Part nr.: STW28N60DM2
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

MDmesh DM2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Length

15.75mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.15mm

Height

20.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Päritoluriik

China

Toote üksikasjad

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

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Lao andmed ajutiselt ei ole saadaval.

€ 91,50

€ 3,05 tk (torus 30) (ilma käibemaksuta)

€ 111,63

€ 3,721 tk (torus 30) (koos käibemaksuga)

STMicroelectronics MDmesh DM2 N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STW28N60DM2

€ 91,50

€ 3,05 tk (torus 30) (ilma käibemaksuta)

€ 111,63

€ 3,721 tk (torus 30) (koos käibemaksuga)

STMicroelectronics MDmesh DM2 N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STW28N60DM2
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kogusÜhikuhindPer Tuub
30 - 30€ 3,05€ 91,50
60 - 120€ 2,40€ 72,00
150+€ 2,20€ 66,00

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

MDmesh DM2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Length

15.75mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.15mm

Height

20.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Päritoluriik

China

Toote üksikasjad

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more