Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.83mm
Length
10.63mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Height
16.12mm
PRICED TO CLEAR
Yes
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,34
tk (torus 50) (ilma käibemaksuta)
€ 0,415
tk (torus 50) (koos käibemaksuga)
50
€ 0,34
tk (torus 50) (ilma käibemaksuta)
€ 0,415
tk (torus 50) (koos käibemaksuga)
50
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.83mm
Length
10.63mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Height
16.12mm
PRICED TO CLEAR
Yes
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad