P-Channel MOSFET, 5.6 A, 100 V, 3-Pin DPAK Vishay IRFR9120TRPBF

RS tootekood: 165-7218Bränd: VishayTootja Part nr.: IRFR9120TRPBF
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

5.6 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Height

2.38mm

Minimum Operating Temperature

-55 °C

Päritoluriik

Malaysia

Toote üksikasjad

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,71

tk (rullis 2000) (ilma käibemaksuta)

€ 0,866

tk (rullis 2000) (koos käibemaksuga)

P-Channel MOSFET, 5.6 A, 100 V, 3-Pin DPAK Vishay IRFR9120TRPBF

€ 0,71

tk (rullis 2000) (ilma käibemaksuta)

€ 0,866

tk (rullis 2000) (koos käibemaksuga)

P-Channel MOSFET, 5.6 A, 100 V, 3-Pin DPAK Vishay IRFR9120TRPBF
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

5.6 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Height

2.38mm

Minimum Operating Temperature

-55 °C

Päritoluriik

Malaysia

Toote üksikasjad

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more