N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA90DP-T1-RE3

RS tootekood: 134-9698Bränd: VishayTootja Part nr.: SIRA90DP-T1-RE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

5.26mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.25mm

Typical Gate Charge @ Vgs

102 nC @ 10 V

Height

1.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Toote üksikasjad

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,693

tk (pakis 5) (ilma käibemaksuta)

€ 0,845

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA90DP-T1-RE3
Valige pakendi tüüp

Standard

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 5.

Tootmine -

Saadaval mitmekordselt 5.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

5

Saadaval mitmekordselt 5
5€ 3,46
10€ 6,93
15€ 10,40
20€ 13,86
25€ 17,32
30€ 20,79
35€ 24,26
40€ 27,72
45€ 31,18
50€ 34,65
55€ 38,12
60€ 41,58
65€ 45,04
70€ 48,51
75€ 51,98

€ 0,693

tk (pakis 5) (ilma käibemaksuta)

€ 0,845

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA90DP-T1-RE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Standard

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 5.

Tootmine -

Saadaval mitmekordselt 5.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

5

Saadaval mitmekordselt 5
5€ 3,46
10€ 6,93
15€ 10,40
20€ 13,86
25€ 17,32
30€ 20,79
35€ 24,26
40€ 27,72
45€ 31,18
50€ 34,65
55€ 38,12
60€ 41,58
65€ 45,04
70€ 48,51
75€ 51,98

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

5.26mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.25mm

Typical Gate Charge @ Vgs

102 nC @ 10 V

Height

1.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Toote üksikasjad

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more