MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



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Täpsem kirjeldus Brand Stock Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Maximum Power Dissipation Typical Gate Charge @ Vgs Series Width Height Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material Automotive Standard
FDMC010N08C N-Channel MOSFET, 51 A, 80 V, 8-Pin Power33 ON Semiconductor ON Semiconductor 3000 N 51 A 80 V 10 mΩ 4V 2V ±20 V Power33 Surface Mount 8 Single Enhancement 52 W 15 nC @ 10 V - 3.4mm 0.75mm 3.4mm 1.3V - +150 °C 1 -55 °C - -
FCD360N65S3R0 N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK ON Semiconductor ON Semiconductor 2500 N 10 A 650 V 360 mΩ 4.5V 2.5V ±30 V TO-252 Surface Mount 3 Single Enhancement 83 W 18 nC @ 10 V - 6.22mm 2.39mm 6.73mm 1.2V - +150 °C 1 -55 °C - -
FDD86250-F085 N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK ON Semiconductor ON Semiconductor 2500 N 50 A 150 V 22 mΩ 4V 2V ±20 V TO-252 Surface Mount 3 Single Enhancement 160 W 28 nC @ 10 V - 6.22mm 2.39mm 6.73mm 1.25V - +175 °C 1 -55 °C - -
NTD5C434NT4G N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK ON Semiconductor ON Semiconductor 2500 N 160 A 40 V 2.1 mΩ 4V 2V ±20 V DPAK Surface Mount 3 Single Enhancement 120 W 80.6 nC @ 10 V - 6.22mm 2.25mm 6.73mm 1.2V - +175 °C 1 -55 °C - -
NTD5C648NLT4G N-Channel MOSFET, 91 A, 60 V, 3-Pin DPAK ON Semiconductor ON Semiconductor 2500 N 91 A 60 V 4.1 mΩ 2.1V 1.2V ±20 V DPAK Surface Mount 3 Single Enhancement 76 W 17 nC @ 4.5 - 6.22mm 2.25mm 6.73mm 1.2V - +175 °C 1 -55 °C - -
NVD5C454NT4G N-Channel MOSFET, 83 A, 40 V, 4-Pin DPAK ON Semiconductor ON Semiconductor 2500 N 83 A 40 V 4.2 mΩ 4V 2V ±20 V DPAK Surface Mount 4 Single Enhancement 56 W 32 nC @ 10 V - 6.22mm 2.25mm 6.73mm 1.2V - +175 °C 1 -55 °C - -
FDBL86066-F085 N-Channel MOSFET, 240 A, 100 V, 8-Pin H-PSOF ON Semiconductor ON Semiconductor 2000 N 240 A 100 V 4.1 mΩ 4V 2V ±20 V H-PSOF Surface Mount 8 Single Enhancement 300 W 47 nC @ 10 V - 11.78mm 2.4mm 9.9mm 1.25V - +175 °C 1 -55 °C - -
NTMFD5C674NLT1G Dual N-Channel MOSFET, 42 A, 60 V, 8-Pin DFN ON Semiconductor ON Semiconductor 1500 N 42 A 60 V 14.4 mΩ 2.2V 1.2V ±20 V DFN Surface Mount 8 - Enhancement 37 W 4.7 nC @ 4.5 V - 6.1mm 1.05mm 5.1mm 1.2V - +175 °C 2 -55 °C - -
NTMFS6H818NT1G N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN ON Semiconductor ON Semiconductor 1500 N 123 A 80 V 3.7 mΩ 4V 2V ±20 V DFN Surface Mount 5 Single Enhancement 3.8 W 46 nC @ 10 V - 6.1mm 1.05mm 5.1mm 1.2V - +175 °C 1 -55 °C - -
NTTFS6H850NTAG N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN ON Semiconductor ON Semiconductor 1500 N 68 A 80 V 9.5 mΩ 4V 2V ±20 V WDFN Surface Mount 8 Single Enhancement 107 W 3.6 nC @ 10 V - 3.15mm 0.75mm 3.15mm 1.2V - +175 °C 1 -55 °C - -
NVMFD5C446NT1G Dual N-Channel MOSFET, 127 A, 40 V, 8-Pin DFN ON Semiconductor ON Semiconductor 1500 N 127 A 40 V 2.9 mΩ 3.5V 2.5V ±20 V DFN Surface Mount 8 - Enhancement 89 W 38 nC @ 10 V - 6.1mm 1.05mm 5.1mm 1.2V - +175 °C 2 -55 °C - -
NVMFD5C478NLT1G Dual N-Channel MOSFET, 29 A, 40 V, 8-Pin DFN ON Semiconductor ON Semiconductor 1500 N 29 A 40 V 14.5 mΩ 2.2V 1.2V ±20 V DFN Surface Mount 8 - Enhancement 23 W 8.1 nC @ 10 V - 6.1mm 1.05mm 5.1mm 1.2V - +175 °C 2 -55 °C - -
NVMFD5C478NT1G Dual N-Channel MOSFET, 27 A, 40 V, 8-Pin DFN ON Semiconductor ON Semiconductor 1500 N 27 A 40 V 17 mΩ 3.5V 2.5V ±20 V DFN Surface Mount 8 - Enhancement 23 W 6.3 nC @ 10 V - 6.1mm 1.05mm 5.1mm 1.2V - +175 °C 2 -55 °C - -
NVMFS5A160PLZWFT1G P-Channel MOSFET, 100 A, 60 V, 5-Pin DFN ON Semiconductor ON Semiconductor 1500 P 100 A 60 V 7.7 mΩ 2.6V 1.2V ±20 V DFN Surface Mount 5 Single Enhancement 200 W 160 nC @ 10 V - 6.1mm 1.05mm 5.1mm 1.5V - +175 °C 1 -55 °C - -
NVMFS5C426NLT1G N-Channel MOSFET, 237 A, 40 V, 5-Pin DFN ON Semiconductor ON Semiconductor 1500 N 237 A 40 V 1.2 mΩ 2V 1.2V ±20 V DFN Surface Mount 5 Single Enhancement 128 W 44 nC @ 4.5 V - 6.1mm 1.05mm 5.1mm 1.2V - +175 °C 1 -55 °C - -
NVMFS5C468NT1G N-Channel MOSFET, 35 A, 40 V, 5-Pin DFN ON Semiconductor ON Semiconductor 1500 N 35 A 40 V 12 mΩ 3.5V 2.5V ±20 V DFN Surface Mount 5 Single Enhancement 28 W 7.9 nC @ 10 V - 6.1mm 1.05mm 5.1mm 1.2V - +175 °C 1 -55 °C - -
NVMFS5C680NLT1G N-Channel MOSFET, 21 A, 60 V, 5-Pin DFN ON Semiconductor ON Semiconductor 1500 N 21 A 60 V 27.5 mΩ 2.2V 1.2V ±20 V DFN Surface Mount 5 Single Enhancement 24 W 5.8 nC @ 10 V - 6.1mm 1.05mm 5.1mm 1.2V - +175 °C 1 -55 °C - -
NVMFS6H801NT1G N-Channel MOSFET, 157 A, 80 V, 5-Pin DFN ON Semiconductor ON Semiconductor 1500 N 157 A 80 V 2.8 mΩ 4V 2V ±20 V DFN Surface Mount 5 Single Enhancement 166 W 64 nC @ 10 V - 6.1mm 1.05mm 5.1mm 1.2V - +175 °C 1 -55 °C - -
NVMFS6H818NT1G N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN ON Semiconductor ON Semiconductor 1500 N 123 A 80 V 3.7 mΩ 4V 2V ±20 V DFN Surface Mount 5 Single Enhancement 136 W 46 nC @ 10 V - 6.1mm 1.05mm 5.1mm 1.2V - +175 °C 1 -55 °C - -
NTB082N65S3F N-Channel MOSFET, 40 A, 650 V, 3-Pin D2PAK ON Semiconductor ON Semiconductor 800 N 40 A 650 V 82 mΩ 5V 3V ±30 V TO-263 Surface Mount 3 Single Enhancement 313 W 81 nC @ 10 V - 9.65mm 4.58mm 10.67mm 1.3V - +150 °C 1 -55 °C - -
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