Diodes Inc DMP P-Channel MOSFET, 90 A, 30 V, 8-Pin DI5060 DMP3007SPS-13

RS tootekood: 146-4729Bränd: DiodesZetexTootja Part nr.: DMP3007SPS-13
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

30 V

Series

DMP

Package Type

DI5060

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Length

5.1mm

Number of Elements per Chip

1

Width

6mm

Typical Gate Charge @ Vgs

64.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.1mm

Toote üksikasjad

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Lao andmed ajutiselt ei ole saadaval.

€ 972,50

€ 0,389 tk (rullis 2500) (ilma käibemaksuta)

€ 1 186,45

€ 0,475 tk (rullis 2500) (koos käibemaksuga)

Diodes Inc DMP P-Channel MOSFET, 90 A, 30 V, 8-Pin DI5060 DMP3007SPS-13

€ 972,50

€ 0,389 tk (rullis 2500) (ilma käibemaksuta)

€ 1 186,45

€ 0,475 tk (rullis 2500) (koos käibemaksuga)

Diodes Inc DMP P-Channel MOSFET, 90 A, 30 V, 8-Pin DI5060 DMP3007SPS-13
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

30 V

Series

DMP

Package Type

DI5060

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Length

5.1mm

Number of Elements per Chip

1

Width

6mm

Typical Gate Charge @ Vgs

64.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.1mm

Toote üksikasjad

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more