Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
240 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-40 V, +40 V
Maximum Operating Temperature
+150 °C
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Height
4.01mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 67,50
€ 1,35 tk (lindis) (ilma käibemaksuta)
€ 82,35
€ 1,647 tk (lindis) (koos käibemaksuga)
Tootmispakett (Lint)
50
€ 67,50
€ 1,35 tk (lindis) (ilma käibemaksuta)
€ 82,35
€ 1,647 tk (lindis) (koos käibemaksuga)
Tootmispakett (Lint)
50
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Lint |
---|---|---|
50 - 95 | € 1,35 | € 6,75 |
100 - 245 | € 1,05 | € 5,25 |
250 - 495 | € 0,984 | € 4,92 |
500+ | € 0,96 | € 4,80 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
240 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-40 V, +40 V
Maximum Operating Temperature
+150 °C
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Height
4.01mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad