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Infineon N-Channel MOSFET, 45 A, 60 V, 3-Pin DPAK IPD053N06NATMA1

RS tootekood: 178-7370Bränd: InfineonTootja Part nr.: IPD053N06NATMA1
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 5

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

2.41mm

Toote üksikasjad

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Lao andmed ajutiselt ei ole saadaval.

€ 1 440,00

€ 0,576 tk (rullis 2500) (ilma käibemaksuta)

€ 1 756,80

€ 0,703 tk (rullis 2500) (koos käibemaksuga)

Infineon N-Channel MOSFET, 45 A, 60 V, 3-Pin DPAK IPD053N06NATMA1

€ 1 440,00

€ 0,576 tk (rullis 2500) (ilma käibemaksuta)

€ 1 756,80

€ 0,703 tk (rullis 2500) (koos käibemaksuga)

Infineon N-Channel MOSFET, 45 A, 60 V, 3-Pin DPAK IPD053N06NATMA1
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 5

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

2.41mm

Toote üksikasjad

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more