Infineon CoolMOS™ C6 N-Channel MOSFET, 10.6 A, 650 V, 3-Pin DPAK IPD60R380C6ATMA1

RS tootekood: 753-3011Bränd: InfineonTootja Part nr.: IPD60R380C6ATMA1
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

10.6 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ C6

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

32 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

2.41mm

Toote üksikasjad

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Lao andmed ajutiselt ei ole saadaval.

€ 3,50

€ 1,75 tk (pakis 2) (ilma käibemaksuta)

€ 4,34

€ 2,17 tk (pakis 2) (koos käibemaksuga)

Infineon CoolMOS™ C6 N-Channel MOSFET, 10.6 A, 650 V, 3-Pin DPAK IPD60R380C6ATMA1
Valige pakendi tüüp

€ 3,50

€ 1,75 tk (pakis 2) (ilma käibemaksuta)

€ 4,34

€ 2,17 tk (pakis 2) (koos käibemaksuga)

Infineon CoolMOS™ C6 N-Channel MOSFET, 10.6 A, 650 V, 3-Pin DPAK IPD60R380C6ATMA1
Lao andmed ajutiselt ei ole saadaval.
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No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

10.6 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ C6

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

32 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

2.41mm

Toote üksikasjad

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more