Infineon OptiMOS™ 3 N-Channel MOSFET, 58 A, 100 V, 3-Pin TO-220 IPP126N10N3GXKSA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™ 3
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
23.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
26 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 5,96
€ 0,596 tk (pakis 10) (ilma käibemaksuta)
€ 7,27
€ 0,727 tk (pakis 10) (koos käibemaksuga)
Standard
10
€ 5,96
€ 0,596 tk (pakis 10) (ilma käibemaksuta)
€ 7,27
€ 0,727 tk (pakis 10) (koos käibemaksuga)
Standard
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™ 3
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
23.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
94 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
26 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products