Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
533 A
Maximum Drain Source Voltage
40 V
Package Type
DFNW8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
480 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
245 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
8mm
Length
8.1mm
Typical Gate Charge @ Vgs
187 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.15mm
€ 84,00
tk (rullis) (ilma käibemaksuta)
€ 104,16
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
20
€ 84,00
tk (rullis) (ilma käibemaksuta)
€ 104,16
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
20
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
533 A
Maximum Drain Source Voltage
40 V
Package Type
DFNW8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
480 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
245 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
8mm
Length
8.1mm
Typical Gate Charge @ Vgs
187 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.15mm