Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
85 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
140 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.7mm
Toote üksikasjad
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 28,50
€ 2,85 tk (torus) (ilma käibemaksuta)
€ 34,77
€ 3,477 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
10
€ 28,50
€ 2,85 tk (torus) (ilma käibemaksuta)
€ 34,77
€ 3,477 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Tuub |
---|---|---|
10 - 20 | € 2,85 | € 14,25 |
25 - 45 | € 2,50 | € 12,50 |
50 - 120 | € 2,35 | € 11,75 |
125+ | € 2,20 | € 11,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
85 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
140 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.7mm
Toote üksikasjad