Vishay Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual SQJ208EP-T1_GE3
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A, 60 A
Maximum Drain Source Voltage
40 (Channel 1) V, 40 (Channel 2) V
Package Type
PowerPAK SO-8L Dual
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3 (Channel 1) V, 2.4 (Channel 2) V
Minimum Gate Threshold Voltage
1.3 (Channel 1) V, 1.4 (Channel 2) V
Maximum Power Dissipation
27 W, 48 W
Transistor Configuration
Dual
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Width
4.47mm
Length
5mm
Typical Gate Charge @ Vgs
22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2)
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
1.01mm
Automotive Standard
AEC-Q101
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€ 1 935,00
€ 0,645 tk (rullis 3000) (ilma käibemaksuta)
€ 2 360,70
€ 0,787 tk (rullis 3000) (koos käibemaksuga)
3000
€ 1 935,00
€ 0,645 tk (rullis 3000) (ilma käibemaksuta)
€ 2 360,70
€ 0,787 tk (rullis 3000) (koos käibemaksuga)
3000
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A, 60 A
Maximum Drain Source Voltage
40 (Channel 1) V, 40 (Channel 2) V
Package Type
PowerPAK SO-8L Dual
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3 (Channel 1) V, 2.4 (Channel 2) V
Minimum Gate Threshold Voltage
1.3 (Channel 1) V, 1.4 (Channel 2) V
Maximum Power Dissipation
27 W, 48 W
Transistor Configuration
Dual
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Width
4.47mm
Length
5mm
Typical Gate Charge @ Vgs
22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2)
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
1.01mm
Automotive Standard
AEC-Q101
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products