Diodes Inc P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-323 BSS84W-7-F

RS tootekood: 121-9434Bränd: DiodesZetexTootja Part nr.: BSS84W-7-F
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.35mm

Length

2.2mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Lao andmed ajutiselt ei ole saadaval.

€ 177,00

€ 0,059 tk (rullis 3000) (ilma käibemaksuta)

€ 219,48

€ 0,073 tk (rullis 3000) (koos käibemaksuga)

Diodes Inc P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-323 BSS84W-7-F

€ 177,00

€ 0,059 tk (rullis 3000) (ilma käibemaksuta)

€ 219,48

€ 0,073 tk (rullis 3000) (koos käibemaksuga)

Diodes Inc P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-323 BSS84W-7-F
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Rull
3000 - 6000€ 0,059€ 177,00
9000+€ 0,055€ 165,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.35mm

Length

2.2mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more