Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
6.8 A, 9 A
Maximum Drain Source Voltage
30 V
Series
DMC3016LNS
Package Type
PDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ, 38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2 V, 2.4 V
Minimum Gate Threshold Voltage
1.2 V, 1.4 V
Maximum Power Dissipation
2 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
19.7 nC @ 15 V, 21 nC @ 15 V
Width
3.15mm
Number of Elements per Chip
2
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,069
tk (pakis 20) (ilma käibemaksuta)
€ 0,084
tk (pakis 20) (koos käibemaksuga)
Standard
20
€ 0,069
tk (pakis 20) (ilma käibemaksuta)
€ 0,084
tk (pakis 20) (koos käibemaksuga)
Standard
20
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
6.8 A, 9 A
Maximum Drain Source Voltage
30 V
Series
DMC3016LNS
Package Type
PDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ, 38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2 V, 2.4 V
Minimum Gate Threshold Voltage
1.2 V, 1.4 V
Maximum Power Dissipation
2 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
19.7 nC @ 15 V, 21 nC @ 15 V
Width
3.15mm
Number of Elements per Chip
2
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad