Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
3.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
10.2 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 48,00
€ 0,096 tk (rullis) (ilma käibemaksuta)
€ 59,52
€ 0,119 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
500
€ 48,00
€ 0,096 tk (rullis) (ilma käibemaksuta)
€ 59,52
€ 0,119 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
500
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Rull |
---|---|---|
500 - 900 | € 0,096 | € 9,60 |
1000 - 2400 | € 0,076 | € 7,60 |
2500 - 4900 | € 0,072 | € 7,20 |
5000+ | € 0,051 | € 5,10 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
3.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
10.2 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad