Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
30 V
Series
DMP
Package Type
V-DFN3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
3.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.35mm
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.78mm
Toote üksikasjad
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,094
tk (rullis 3000) (ilma käibemaksuta)
€ 0,115
tk (rullis 3000) (koos käibemaksuga)
3000
€ 0,094
tk (rullis 3000) (ilma käibemaksuta)
€ 0,115
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
30 V
Series
DMP
Package Type
V-DFN3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
3.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.35mm
Typical Gate Charge @ Vgs
64.2 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
0.78mm
Toote üksikasjad