Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.7mm
Typical Gate Charge @ Vgs
67 nC @ 10V
Height
2.26mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Päritoluriik
China
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,415
tk (rullis) (ilma käibemaksuta)
€ 0,506
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
10
€ 0,415
tk (rullis) (ilma käibemaksuta)
€ 0,506
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
10
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.7mm
Typical Gate Charge @ Vgs
67 nC @ 10V
Height
2.26mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Päritoluriik
China