Diodes Inc P-Channel MOSFET, 700 mA, 100 V, 3-Pin SOT-23 ZXMP10A13FTA

RS tootekood: 669-7616Bränd: DiodesZetexTootja Part nr.: ZXMP10A13FTA
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

700 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

806 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

1.8 nC @ 5 V, 3.5 nC @ 10 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 100V to 450V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Lao andmed ajutiselt ei ole saadaval.

€ 12,48

€ 0,499 tk (pakis 25) (ilma käibemaksuta)

€ 15,47

€ 0,619 tk (pakis 25) (koos käibemaksuga)

Diodes Inc P-Channel MOSFET, 700 mA, 100 V, 3-Pin SOT-23 ZXMP10A13FTA
Valige pakendi tüüp

€ 12,48

€ 0,499 tk (pakis 25) (ilma käibemaksuta)

€ 15,47

€ 0,619 tk (pakis 25) (koos käibemaksuga)

Diodes Inc P-Channel MOSFET, 700 mA, 100 V, 3-Pin SOT-23 ZXMP10A13FTA
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
25 - 125€ 0,499€ 12,48
150 - 725€ 0,415€ 10,38
750 - 1475€ 0,351€ 8,78
1500+€ 0,288€ 7,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

700 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

806 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

1.8 nC @ 5 V, 3.5 nC @ 10 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 100V to 450V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more