Tehnilised dokumendid
Spetsifikatsioonid:
Maximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 9.65 x 4.83mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Toote üksikasjad
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 2,90
tk (rullis) (ilma käibemaksuta)
€ 3,538
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
5
€ 2,90
tk (rullis) (ilma käibemaksuta)
€ 3,538
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
5
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
5 - 5 | € 2,90 | € 14,50 |
10 - 95 | € 2,45 | € 12,25 |
100 - 245 | € 1,90 | € 9,50 |
250 - 495 | € 1,85 | € 9,25 |
500+ | € 1,70 | € 8,50 |
Tehnilised dokumendid
Spetsifikatsioonid:
Maximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 9.65 x 4.83mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Toote üksikasjad
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.