Tehnilised dokumendid
Spetsifikatsioonid:
Brand
FujiMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
280 W
Package Type
M636
Configuration
3 Phase Bridge
Mounting Type
Screw Mount
Channel Type
N
Pin Count
28
Dimensions
107.5 x 45 x 17mm
Maximum Operating Temperature
+150 °C
Toote üksikasjad
IGBT Modules 6-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
P.O.A.
1
P.O.A.
1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
FujiMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
280 W
Package Type
M636
Configuration
3 Phase Bridge
Mounting Type
Screw Mount
Channel Type
N
Pin Count
28
Dimensions
107.5 x 45 x 17mm
Maximum Operating Temperature
+150 °C
Toote üksikasjad
IGBT Modules 6-Pack, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.