Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMemory Size
64kbit
Organisation
8K x 8 bit
Interface Type
Serial-2 Wire, Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
550ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Maximum Operating Supply Voltage
3.65 V
Width
3.98mm
Height
1.48mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Minimum Operating Supply Voltage
2.7 V
Number of Words
8K
Minimum Operating Temperature
-40 °C
Toote üksikasjad
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 3,60
tk (pakis 2) (ilma käibemaksuta)
€ 4,392
tk (pakis 2) (koos käibemaksuga)
2
€ 3,60
tk (pakis 2) (ilma käibemaksuta)
€ 4,392
tk (pakis 2) (koos käibemaksuga)
2
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
2 - 8 | € 3,60 | € 7,20 |
10 - 38 | € 2,70 | € 5,40 |
40 - 98 | € 2,60 | € 5,20 |
100+ | € 2,40 | € 4,80 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonMemory Size
64kbit
Organisation
8K x 8 bit
Interface Type
Serial-2 Wire, Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
550ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Maximum Operating Supply Voltage
3.65 V
Width
3.98mm
Height
1.48mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Minimum Operating Supply Voltage
2.7 V
Number of Words
8K
Minimum Operating Temperature
-40 °C
Toote üksikasjad
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.