Infineon SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14 IMYH200R024M1HXKSA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
2000 V
Series
CoolSiC 2000 V SiC Trench MOSFET
Package Type
PG-TO247-4-PLUS-NT14
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Päritoluriik
Malaysia
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€ 1 090,00
€ 109,00 tk (torus) (ilma käibemaksuta)
€ 1 329,80
€ 132,98 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
10
€ 1 090,00
€ 109,00 tk (torus) (ilma käibemaksuta)
€ 1 329,80
€ 132,98 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
2000 V
Series
CoolSiC 2000 V SiC Trench MOSFET
Package Type
PG-TO247-4-PLUS-NT14
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Päritoluriik
Malaysia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products