N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD25CN10NGATMA1

RS tootekood: 171-1917Bränd: InfineonTootja Part nr.: IPD25CN10NGATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

IPD25CN10N G

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Width

7.47mm

Number of Elements per Chip

1

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 1,15

tk (pakis 10) (ilma käibemaksuta)

€ 1,403

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD25CN10NGATMA1
Valige pakendi tüüp

€ 1,15

tk (pakis 10) (ilma käibemaksuta)

€ 1,403

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD25CN10NGATMA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
10 - 90€ 1,15€ 11,50
100 - 240€ 0,889€ 8,89
250 - 490€ 0,832€ 8,32
500 - 990€ 0,775€ 7,75
1000+€ 0,719€ 7,19

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

IPD25CN10N G

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Width

7.47mm

Number of Elements per Chip

1

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more