Infineon OptiMOS™ 3 N-Channel MOSFET, 70 A, 30 V, 3-Pin TO-220 IPP042N03LGXKSA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Package Type
TO-220
Series
OptiMOS™ 3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Toote üksikasjad
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 16,06
€ 0,803 tk (torus) (ilma käibemaksuta)
€ 19,59
€ 0,98 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
20
€ 16,06
€ 0,803 tk (torus) (ilma käibemaksuta)
€ 19,59
€ 0,98 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
20
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 20 - 90 | € 0,803 | € 8,03 |
| 100 - 240 | € 0,698 | € 6,98 |
| 250 - 490 | € 0,618 | € 6,18 |
| 500+ | € 0,546 | € 5,46 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Package Type
TO-220
Series
OptiMOS™ 3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Toote üksikasjad
Infineon OptiMOS™3 Power MOSFETs, up to 40V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products