Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
59 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
4.7 nC @ 4.5 V, 9.1 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.98mm
Width
3.99mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.57mm
€ 4.71
€ 0.471 Each (In a Pack of 10) (Exc. Vat)
€ 5.84
€ 0.584 Each (In a Pack of 10) (inc. VAT)
Standard
10
€ 4.71
€ 0.471 Each (In a Pack of 10) (Exc. Vat)
€ 5.84
€ 0.584 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | € 0.471 | € 4.71 |
100 - 190 | € 0.323 | € 3.23 |
200+ | € 0.307 | € 3.07 |
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
59 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
4.7 nC @ 4.5 V, 9.1 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.98mm
Width
3.99mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.57mm