Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1

RS tootekood: 284-791Bränd: InfineonTootja Part nr.: ISZ15EP15LMATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS Power Transistor

Package Type

PG-TSDSON-8 FL

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Lao andmed ajutiselt ei ole saadaval.

€ 1 910,00

€ 0,382 tk (rullis 5000) (ilma käibemaksuta)

€ 2 330,20

€ 0,466 tk (rullis 5000) (koos käibemaksuga)

Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1

€ 1 910,00

€ 0,382 tk (rullis 5000) (ilma käibemaksuta)

€ 2 330,20

€ 0,466 tk (rullis 5000) (koos käibemaksuga)

Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1
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Lao andmed ajutiselt ei ole saadaval.

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Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS Power Transistor

Package Type

PG-TSDSON-8 FL

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more