IXYS Polar HiPerFET N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXFN200N10P
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
200 A
Maximum Drain Source Voltage
100 V
Series
Polar HiPerFET
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
680 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
25.07mm
Length
38.23mm
Typical Gate Charge @ Vgs
235 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
9.6mm
Päritoluriik
Philippines
Toote üksikasjad
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 281,00
€ 28,10 tk (torus 10) (ilma käibemaksuta)
€ 348,44
€ 34,844 tk (torus 10) (koos käibemaksuga)
10
€ 281,00
€ 28,10 tk (torus 10) (ilma käibemaksuta)
€ 348,44
€ 34,844 tk (torus 10) (koos käibemaksuga)
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
200 A
Maximum Drain Source Voltage
100 V
Series
Polar HiPerFET
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
680 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
25.07mm
Length
38.23mm
Typical Gate Charge @ Vgs
235 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
9.6mm
Päritoluriik
Philippines
Toote üksikasjad
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products